AO4612,AO4612場(chǎng)效應(yīng)管參數(shù),N+P場(chǎng)效應(yīng)管AO4612,AO4612代換
AO4612場(chǎng)效應(yīng)管,N+PMOS管AO4612參數(shù)資料,AO4612引腳圖,AO4612中文資料規(guī)格書PDF
AO4612場(chǎng)效應(yīng)管,N+PMOS管AO4612參數(shù)資料,AO4612引腳圖,AO4612中文資料規(guī)格書PDF
AO4612/SOP-8/SOIC-8封裝參數(shù):點(diǎn)擊查看
極性:NPN+PNP
NPN極參數(shù)如下:
NPN極參數(shù)如下:
Drain-Source Voltage 漏源電壓Vds:60V
Gate-Source Voltage 柵源電壓Vgs:±20V
Continuous Drain Current 漏極電流Id Tc=25℃:5A
Power Dissipation 功率損耗Pd Ta=25℃:1.5W
Power Dissipation 功率損耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=4A,VGS=10V: Typ 60mΩ Max 75mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=2A,VGS=4.5V:Typ 70mΩ Max 95mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
PNP極參數(shù)如下:
Drain-Source Voltage 漏源電壓Vds:-60V
Gate-Source Voltage 柵源電壓Vgs:±20V
Continuous Drain Current 漏極電流Id Tc=25℃:-4A
Power Dissipation 功率損耗Pd Ta=25℃:1.5W
Power Dissipation 功率損耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-3A,VGS=-10V: Typ 100mΩ Max 115mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-2A,VGS=-4.5V:Typ 115mΩ Max 130mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
AO4612場(chǎng)效應(yīng)管SOP-8/SOIC-8封裝尺寸:
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